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MSC8001

High Power GaAs FET

Description

MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel Application...

Advanced Semiconductor

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