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MSC8001

Advanced Semiconductor
Part Number MSC8001
Manufacturer Advanced Semiconductor
Description High Power GaAs FET
Published Apr 17, 2005
Detailed Description MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimize...
Datasheet PDF File MSC8001 PDF File

MSC8001
MSC8001


Overview
MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.
5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications Custom Electrical Test and Screening Available for Source Control Drawings • • FET PACKAGE TYPE 30 • • • TRANS1.
SYM RF ELECTRICAL SPECIFICATIONS SYMBOL MAG PMAG FREQUENCY MAX AVAILABLE GAIN TA = 25 C O TEST CONDITIONS = 8.
0 GHz MINIMUM TYPICAL MAXIMUM 8.
5 24 UNITS dB dBm OUTPUT POWER AT MAG TUNING FREQUENCY = 8.
0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...



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