Part Number
|
APT10030L2VR |
Manufacturer
|
Advanced Power Technology |
Description
|
MOSFET |
Published
|
Apr 23, 2005 |
Detailed Description
|
APT10030L2VR
1000V 33A 0.300W
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode...
|
Datasheet
|
APT10030L2VR
|
Overview
APT10030L2VR
1000V 33A 0.
300W
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-264 Max
• TO-264 MAX Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• 100% Avalanche Tested
G
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT10030L2VR UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Ga...
Similar Datasheet