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APT10030L2VR

Advanced Power Technology
Part Number APT10030L2VR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10030L2VR 1000V 33A 0.300W POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode...
Datasheet PDF File APT10030L2VR PDF File

APT10030L2VR
APT10030L2VR

Overview
APT10030L2VR 1000V 33A 0.
300W POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested G D S All Ratings: TC = 25°C unless otherwise specified.
APT10030L2VR UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Ga...


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