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APT10050JN

Part Number APT10050JN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D S G D S G S SO 2 T- 27 APT10050JN 1000V 20.5A 0.50Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV...
Datasheet APT10050JN





Overview
D S G D S G S SO 2 T- 27 APT10050JN 1000V 20.
5A 0.
50Ω "UL Recognized" File No.
E145592 (S) ISOTOP® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified.
APT 10050JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 20.
5 82 ± 30 520 4.
16 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 and Inductive Current Clamped Volts Watts ...






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