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APT10050B2VFR

Advanced Power Technology
Part Number APT10050B2VFR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10050B2VFR APT10050LVFR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode pow...
Datasheet PDF File APT10050B2VFR PDF File

APT10050B2VFR
APT10050B2VFR

Overview
APT10050B2VFR APT10050LVFR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VR 1000V 21A 0.
500W T-MAX™ TO-264 LVR • Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 D G S • 100% Avalanche Tested All Ratings: TC = 25°C unless otherwise specified.
APT10050 UNIT Volts Amps 1000 21 84 ±30 ±40 520 4.
16 -55 to 150 300 21 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche ...


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