DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S; LCE2009S
NPN microwave power
transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03
Philips Semiconductors
Product specification
NPN microwave power
transistors
FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability.
APPLICATIONS • Common emitter class-A linear power amplifiers up to 4 GHz.
PIN 1 2 3 4 DESCRIPTION
LBE2003S; LBE2009S; LCE2009S
The LBE2003S and LBE2009S are
NPN silicon planar epitaxial microwave power
transistors in a SOT44...