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LBE2003S

Philipss
Part Number LBE2003S
Manufacturer Philipss
Description NPN microwave power transistors
Published Apr 25, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification S...
Datasheet PDF File LBE2003S PDF File

LBE2003S
LBE2003S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability.
APPLICATIONS • Common emitter class-A linear power amplifiers up to 4 GHz.
PIN 1 2 3 4 DESCRIPTION LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.
The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.
PINNING DESCRIPTION collector emitter base emitter handbook, halfpage 4 handbook, halfpage 4 c 3 1 3 c b e 2 Top view Marking code: LCE2009S = 408.
MAM330 b e 2 1 Top view MAM32...


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