DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PDTC114TT
NPN resistor-equipped
transistor
Objective specification Supersedes data of 1998 May 19 1999 Apr 16
Philips Semiconductors
Objective specification
NPN resistor-equipped
transistor
FEATURES • Built-in bias resistor R1 (typ.
10 kΩ) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of an external resistor.
handbook, 4 columns
PDTC114TT
3 3 R1 1 2 1 2
MAM360
Top view
Fig.
1 Simplified outline (SOT23) and symbol.
DESCRIPTION
NPN resistor-equipped
transistor in ...