DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC114YE
NPN resistor-equipped
transistor
Product specification Supersedes data of 1998 May 19 1999 May 18
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES • Built-in bias resistors R1 and R2 (typ.
10 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
1 2
handbook, halfpage
PDTC114YE
PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION
3 R1 1 R2
3
2
MAM346
DESCRIPTION
NPN...