DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC123ET
NPN resistor-equipped
transistor
Product specification Supersedes data of 1998 May 08 1999 May 21
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES • Built-in bias resistors R1 and R2 (typ.
2.
2 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
k, 4 columns
PDTC123ET
3 3 R1 1 R2 2 1 2
MAM097
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped
transistor in a SOT23 plastic package.
PNP complement: PDTA123ET...