MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR3045ST/D
Advance Information SWITCHMODE™ Power Rectifier
.
.
.
using the
Schottky Barrier principle with a platinum barrier metal.
This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltage Drop • Guardring for Stress Protection • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.
9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Tem...