MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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SWITCHMODE™
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the
Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.
• • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand ...