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MBRF200100

GeneSiC
Part Number MBRF200100
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published May 6, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM MBRF20045 thru MBRF200100R VRRM ...
Datasheet PDF File MBRF200100 PDF File

MBRF200100
MBRF200100

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM MBRF20045 thru MBRF200100R VRRM = 20 V - 100 V IF = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 45 60 80 100 V 32 42 56 70 V 45 60 80 100 V Continuous forward current IF TC ≤ 140 °C 200 200 200 200 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
3 ms Tj Tstg 1500 -40 to 175 -40 to 175 1500 -40 to 175 -40 to 175 1500 -40 to 175 -40 to 175 1500 -40 to 175 -40 to 175 A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit Diode forward vol...


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