Part Number
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PF0210 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
MOS FET Power Amplifier Module for ADC Mobile Phone |
Published
|
Mar 22, 2005 |
Detailed Description
|
PF0210
MOS FET Power Amplifier Module for ADC Mobile Phone
ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features
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|
Datasheet
|
PF0210
|
Overview
PF0210
MOS FET Power Amplifier Module for ADC Mobile Phone
ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features
• High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave.
Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ
Pin Arrangement
• RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
PF0210
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout
G GND
Z1
C1
FB1
C3
FB2
C2
Z2
Pin
VAPC
VDD
Pout
C1 = C2 = 0.
01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
Abs...
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