DatasheetsPDF.com

PF0210

Hitachi Semiconductor
Part Number PF0210
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for ADC Mobile Phone
Published Mar 22, 2005
Detailed Description PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features ...
Datasheet PDF File PF0210 PDF File

PF0210
PF0210

Overview
PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave.
Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.
01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 4 5.
5 20 –30 to +100 –40 to +110 Unit V A V mW °C °C 2 PF0210 Electrical Characteristics (Tc = 25°C) Analog Transmission Item Frequency Drain cutoff current Total efficiency(1) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Isolation Stability Symbol f I DS ηT(1) 2nd H.
D.
3rd H.
D.
Min 824 — 30 — — Typ — — 34 –55 –60 2 9 –45 Max 849 500 — –30 –40 3 — –40 Unit MHz µA % dBc dBc — W dBm — Pin = 3 dBm, VDD = 12.
5 V, VAPC = 4 V Pin = 3dBm, VDD = 12.
5 V, VAPC = 0.
5 V Pin = 3 dBm, VDD = 12.
5 V, Pout ≤ 6 W, Output VSWR = 20:1 All phases Test Condition — VDD = 17 V, VAPC = 0 V Pin = 3 dBm, VDD = 12.
5 V, Pout = 6 W (VAPC controlled), VSWR (in) — Pout — — 6 — No parasitic oscillation Digital Transmission Item Frequency Total efficiency(2) Adjacent channel leakage power Input power Symbol f ηT(2) PADJ (30k) PADJ (60k) Pin Min 824 25 — — — Typ — 30 –30 –50 — Max 849 — –28 –46 5 Unit MHz % dBc dBc Test Condition — Pin controlled (π/4-DQPSK, √α = 0.
35, 48.
6 kbps), BW =24.
3 kHz with Root Nyquist dBm ave.
Filter, Pout = 5.
5 W ave.
, VDD = 12.
5 V VAPC = 3.
9 V Mechanical Characterist...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)