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PF08103A

Part Number PF08103A
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
Published Mar 22, 2005
Detailed Description PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr...
Datasheet PF08103A





Overview
PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr.
1999 Application • Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 4.
8 V nominal battery use Features • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.
5 dBm input Lead less thin & Small package : 11 × 13.
75 × 1.
8 mm High efficiency : 48% Typ at 34.
5 dBm for E-GSM 36% Typ at 31.
5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Sel...






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