Part Number
|
PF08103A |
Manufacturer
|
Hitachi Semiconductor |
Description
|
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Published
|
Mar 22, 2005 |
Detailed Description
|
PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z) 3rd Edition Apr...
|
Datasheet
|
PF08103A
|
Overview
PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z) 3rd Edition Apr.
1999 Application
• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 4.
8 V nominal battery use
Features
• • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.
5 dBm input Lead less thin & Small package : 11 × 13.
75 × 1.
8 mm High efficiency : 48% Typ at 34.
5 dBm for E-GSM 36% Typ at 31.
5 dBm for DCS1800
PF08103A
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Sel...
Similar Datasheet