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PF08107B

Hitachi Semiconductor
Part Number PF08107B
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module
Published Mar 6, 2016
Detailed Description PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F (Z) 7th Edition Feb. 2...
Datasheet PDF File PF08107B PDF File

PF08107B
PF08107B

Overview
PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F (Z) 7th Edition Feb.
2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).
• For 3.
5 V nominal operation Features • 2 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • One power control pin with one band switch • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.
75 × 1.
6 mm Typ • High efficiency : 50 % Typ at 35.
0 dBm for E-GSM 43 % Typ at 32.
0 dBm for DCS1800 Pin Arrangement • RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08107B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Supply current Vctl voltage Idd GSM Idd DCS Vctl 3.
5 2 4 A A V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C...


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