M58WR128ET

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz ...