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M58WR128ET

ST Microelectronics
Part Number M58WR128ET
Manufacturer ST Microelectronics
Description 128 Mbit 8Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMA...
Datasheet PDF File M58WR128ET PDF File

M58WR128ET
M58WR128ET

Overview
M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.
8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.
65V to 2.
2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1.
Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns FBGA s s SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA60 (ZB) 12.
5 x 12mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58WR128ET: 881Eh – Bottom Device Code, M58WR128EB: 881Fh s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKIN...


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