MITSUBISHI RF POWER MODULE M68731HM SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.
5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 2-R1.
5±0.
1 Dimensions in mm BLOCK DIAGRAM 2 3 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω f=145-174MHz, ZG=ZL=50Ω Ratings 9.
2 6 70 10 -30 to +100 -40...

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