DatasheetsPDF.com

M68731H

Mitsubishi
Part Number M68731H
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68731H SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING ...
Datasheet PDF File M68731H PDF File

M68731H
M68731H

Overview
MITSUBISHI RF POWER MODULE M68731H SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Strage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω f=150-175MHz, ZG=ZL=50Ω Ratings 9.
2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guarateed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 150 7 50 Max 175 Unit MHz W % dBc - VDD=7.
2V, VGG=3.
5V, Pin=50W ZG=50Ω, VDD=4-9.
2V, Load VSWR<4:1 VDD=9.
2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 -20 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 MITSUBISHI RF POWER MODULE M68731H SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS.
FREQUENCY 14 13 @VDD=7.
2V 12 VGG=3.
5V Pin=50mW 11 PO 10 9 8 7 ηT 6 5 4 3 ρin 2 1 0 130 140 150 160 FREQUENCY f (MHz) 90 80 70 60 50 40 30 20 180 0.
1 0.
01 1 100 1 10 OUTPUT POWER, TOTAL EFFICENCY VS.
INPUT POWER 100 @VDD=7.
2V VGG=3.
5V f=150MHz 10 PO ηT 100 170 0.
1 1 10 INPUT POWER Pin (mW) OUTPUT POWER, TOTAL EFFICENCY VS.
INPUT POWER 100 @VDD=7.
2V VGG=3.
5V f=175MHz 10 PO ηT 1 10 100 OUTPUT POWER, TOTAL EFFICIENCY VS.
SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 ηT PO @f=150MHz VGG=3.
5V Pin=50mW 100 90 80 70 60 50 40 3...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)