Radar Pulsed Power
Transistor 100 Watts, 1.
1-1.
3 GHz, 3µs Pulse, 30% Duty
PH1113-100
PH1113-100
Radar Pulsed Power
Transistor - 100 Watts, 1.
1-1.
3 GHz, 3µs Pulse, 30% Duty
Features
• • • • • • • •
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM’s PH1113-100 is a silicon bipolar
NPN power
transistor intended for use in L-band 1.
1 - 1.
3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power applications, the ...