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PH1113-100

Tyco Electronics
Part Number PH1113-100
Manufacturer Tyco Electronics
Description Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Published Mar 22, 2005
Detailed Description Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Tr...
Datasheet PDF File PH1113-100 PDF File

PH1113-100
PH1113-100

Overview
Radar Pulsed Power Transistor 100 Watts, 1.
1-1.
3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.
1-1.
3 GHz, 3µs Pulse, 30% Duty Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1 Description M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.
1 - 1.
3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance matching networks.
Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified) 1.
Tolerances are: inches ± .
005” (millimeters ± 0.
13mm) Broadband Test Fixture Impedance F (GHz) Z IF (Ω) 5.
8 - j3.
4 5.
6 - j1.
8 5.
9 - j0.
4 Z OF (Ω) 3.
0 - j1.
7 3.
0 - j1.
5 2.
8 - j1.
3 1.
1 1.
2 1.
3 Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 70 3.
0 9.
0 350 -65 to +200 200 Units V V A W °C °C TEST FIXTURE INPUT CIRCUIT TEST FIXTURE OUTPUT CIRCUIT 50Ω ZIF ZOF 50Ω Electrical Specifications at 25°C Symbol BVCES ICES RTH(JC) PIN GP η RL VSWR-T Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Test Conditions IC = 5 mA VCE = 32 V VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 1...


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