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Radar Pulsed Power
Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.
1 - 3.
4 GHz
Features
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
I .
I00 I / I ;2.
54--- ,250
-.
152-.
x0 (3.
86-25) 75.
35-7 ,130 -7(3.
30:~
I
I
.
034'.
031
StorageTemperature
T STG
-65 to +200
“‘2
UNLESS
IT-ERWISE
NCTEC,
TZLESANCES
ARE
INCES :MJLLIMETERS
=.
305’ =.
!3MW
Electrical Characteristics
Paramet...