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PH3134-11S

MA-COM
Part Number PH3134-11S
Manufacturer MA-COM
Description Radar Pulsed Power Transistor
Published Aug 29, 2017
Detailed Description PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty Features • NPN silicon microwave power tr...
Datasheet PDF File PH3134-11S PDF File

PH3134-11S
PH3134-11S

Overview
PH3134-11S Radar Pulsed Power Transistor 11W, 3.
1-3.
4 GHz, 1µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.
0 1.
3 125 -65 to +2...


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