,-=r=-= ---== ZY * =
.
-----r
f =
anAMPcompany
Radar Pulsed Power
Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.
1 - 3.
4 GHz
Features
l l l l l l l l
.
650 (16.
51)-
NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching HermeticMetaVCeramic Package
.
225*.
010 (5.
72Z.
25)
Absolute Maximum Ratings at 25°C
.
225t010 (5.
72i.
25) EMIlYER
167i.
010
uNLE.
ss OTHERWISE NOTED, TOLERANCES ARE (nILLIMETERS * 13nH,
INCHES
k.
005’
Electrical Characteristics
at 25°C
Broadband Test Fixture impedances
F(GHz) Z,(Q) ...