DatasheetsPDF.com

PH3134-65M

MA-COM
Part Number PH3134-65M
Manufacturer MA-COM
Description Radar Pulsed Power Transistor
Published Mar 31, 2016
Detailed Description PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power ...
Datasheet PDF File PH3134-65M PDF File

PH3134-65M
PH3134-65M

Overview
PH3134-65M Radar Pulsed Power Transistor 65W, 3.
1-3.
4 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.
0 7.
7 350 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 25mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pout = 65W Input Power Vcc = 36V, Pout = 65W Power Gain ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)