Philips Semiconductors
Product specification
TrenchMOS™
transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power
transistor in a plastic suitable for surface mounting envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in DC-DC converters and general purpose switching applications.
PHB45N03T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
30 45 86 175 24 UNIT V A W ˚C mΩ
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