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PHB45N03LT

NXP
Part Number PHB45N03LT
Manufacturer NXP
Description TrenchMOS transistor Logic level FET
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Ve...
Datasheet PDF File PHB45N03LT PDF File

PHB45N03LT
PHB45N03LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Surface mounting package PHB45N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 45 A g RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHB45N03...


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