Schottky Barrier Diodes (SBD)
MA3X786
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
• Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency
2.
9 − 0.
05
+ 0.
2
2.
8 − 0.
3 0.
65 ± 0.
15 1.
5
+ 0.
2
Unit : mm
0.
65 ± 0.
15
+ 0.
25 − 0.
05
0.
95
1.
9 ± 0.
2
1 3 2
0.
95
1.
45 0 to 0.
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbo...