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MA3X717D

Panasonic
Part Number MA3X717D
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features • Two ...
Datasheet PDF File MA3X717D PDF File

MA3X717D
MA3X717D

Overview
Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features • Two MA3X717s are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
25 − 0.
05 + 0.
2 Unit : mm 0.
65 ± 0.
15 0.
95 1.
9 ± 0.
2 2.
9 − 0.
05 1 3 2 + 0.
2 0.
95 1.
45 1.
1 − 0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C 1 mA Unit V V mA JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) MA3X717D MA3X717E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode Marking Symbol • MA3X717D : M3E • MA3X717E : M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 0.
16 − 0.
06 + 0.
2 + 0.
1 0.
4 − 0.
05 + 0.
1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF Conditions D Min Typ E Max 30 0.
3 1 1.
5 1 Unit µA V V pF ns Detection efficiency 65 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
...


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