Schottky Barrier Diodes (SBD)
MA3X788
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
• Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed
2.
9 − 0.
05
+ 0.
2
2.
8 − 0.
3 0.
65 ± 0.
15 1.
5
+ 0.
2
Unit : mm
0.
65 ± 0.
15
+ 0.
25 − 0.
05
0.
95
1.
9 ± 0.
2
1 3 2
0.
95
1.
45 0 to 0.
1
Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
VR VRRM IFM IF(AV) IFSM Tj Tstg
60 60 300 200 1 125 −55 to +125
V V mA mA A °C °C
0.
1 to 0.
3 0.
4 ± 0.
2
0.
8
Parameter
Sy...