Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification I Features
• IF(AV) = 200 mA, and VR 50 V is achieved • Allowing automatic insertion with the emboss taping • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rectification efficiency caused by its low forward-risevoltage (VF)
2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 − 0.
05
+ 0.
25
+ 0.
2
0.
65 ± 0.
15
0.
5 R
1.
9 ± 0.
2
2.
9 − 0.
05
0.
95
4
1
+ 0.
2
0.
95
0.
5
2
+ 0.
1
3
0.
4 − 0.
05
0.
2 1.
1 − 0.
1
+ 0.
2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non r...