DatasheetsPDF.com

MA4X713

Panasonic
Part Number MA4X713
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features...
Datasheet PDF File MA4X713 PDF File

MA4X713
MA4X713

Overview
Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Mini type 4-pin package 2.
90+0.
02 –0.
05 1.
9±0.
2 (0.
95) (0.
95) 3 4 1.
50+0.
25 –0.
05 2.
8+0.
2 –0.
3 Unit: mm 0.
16+0.
1 –0.
06 0.
5R 2 (0.
2) 0.
60+0.
10 –0.
05 10° 1 (0.
65) 5° +0.
2 0 to 0.
1 1.
1–0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) *: Value per chip * Symbol VR IFM IF Tj Tstg Rating 30 150 110 30 20 125 −55 to +125 Unit V mA Marking Symbol: M1N Internal Connection 3 4 mA °C °C I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * 2 1 Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF Min Typ 1.
1+0.
3 –0.
1 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package Max 1 0.
4 1.
0 Unit µA V Ct trr η 1.
5 1.
0 65 pF ns % Note) 1.
This product is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 200 MHz 3.
*: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 Note) Th...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)