Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.
4 ± 0.
3 0 to 0.
05
• Forward current (average) IF(AV): 1.
5 A type • Reverse voltage (DC value) VR: 30 V • Allowing automatic insertion with the emboss taping
2.
5 ± 0.
3
I Features
2
1
0.
25 − 0.
05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.
5 60 −40 to +125 −40 to +125 Unit V V A A °C °C
1.
2 ± 0.
4 5.
0 − 0.
1
+ 0.
4
1.
2 ± 0.
4
Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
1 : Anode 2 : Cathode New Mini-Powe...