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MA704A

Panasonic
Part Number MA704A
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA6X718 Silicon epitaxial planar type Unit : mm For switching circuits For wave detectio...
Datasheet PDF File MA704A PDF File

MA704A
MA704A

Overview
Schottky Barrier Diodes (SBD) MA6X718 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit I Features • Three MA3X704As in the same direction are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.
8 0.
65 ± 0.
15 6 1.
9 ± 0.
1 0.
95 0.
95 + 0.
2 − 0.
3 + 0.
25 1.
5 − 0.
05 1 0.
65 ± 0.
15 1.
45 ± 0.
1 0.
3 − 0.
05 + 0.
1 2.
9 − 0.
05 + 0.
2 5 2 4 3 1.
1 − 0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current* Symbol VR IFM IF Tj Tstg Rating 30 150 30 125 −55 to +125 Unit V mA mA °C °C 1 : Cathode 1 4 : Anode 3 2 : Cathode 2 5 : Anode 2 3 : Cathode 3 6 : Anode 1 Mini Type Package (6-pin) Forward current (DC)* Junction temperature Storage temperature Note) * : Value in per diode Marking Symbol: M2N Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF 1.
5 1.
0 Conditions Min Typ Max 1 0.
4 1.
0 Unit µA V V pF ns Detection efficiency 65 0 to 0.
05 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 0.
16 − 0.
06 + 0.
2 0.
5 − 0.
05 + 0.
1 + 0.
1 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp 10% Output Pulse tr t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 MA6X718 IF  V F 103 Schottky Barrier Diodes ...


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