Philips Semiconductors
Product specification
TrenchMOS™
transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low-profile surface mount package • Logic level compatible
PHN1011
SYMBOL
d
QUICK REFERENCE DATA VDSS = 25 V ID = 11 A
g
RDS(ON) ≤ 11 mΩ (VGS = 10 V) RDS(ON) ≤ 13.
5 mΩ (VGS = 5 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a surface mounting plastic package using ’trench’ technology.
The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.
c.
to d.
c.
conver...