Philips Semiconductors
Product specification
Dual N-channel enhancement mode TrenchMOSTM
transistor
FEATURES
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package
PHN203
SYMBOL
d1 d1 d2 d2
QUICK REFERENCE DATA
VDS = 25 V ID = 6.
3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.
5 V)
s1 g1 s2 g2
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING
P...