Philips Semiconductors
Product specification
Dual N-channel enhancement mode TrenchMOSTM
transistor
FEATURES
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package
PHN210
SYMBOL
d1 d1 d2 d2
QUICK REFERENCE DATA
VDS = 30 V ID = 3.
4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.
5 V)
s1 g1 s2 g2
GENERAL DESCRIPTION
Dual N-channel enhancement mode field-effect
transistor in a plastic envelope using ’trench’ technology.
Applications:• Motor and relay drivers • d.
c.
to d.
c.
converters • Logic level translator The PHN210 is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING
PIN 1 2 3 4 5,6 7,8 DESCRIPTION source 1 gate...