Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHW35NQ20T
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 35 A
g
RDS(ON) ≤ 70 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT429 (TO247)
1
2
3
LIM...