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PHW35NQ20T

Part Number	PHW35NQ20T
Manufacturer	NXP
Description	N-channel TrenchMOS transistor
Published	Mar 22, 2005
Detailed Description	Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHW35NQ20T FEATURES • ’Trench’ technolo...
Datasheet	PHW35NQ20T PDF File

Overview

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHW35NQ20T FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 35 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 (TO247) 1 2 3 LIM...

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PHW35NQ20T N-channel TrenchMOS transistor - NXP

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