Part Number
|
MG150Q2YS50 |
Manufacturer
|
Toshiba |
Description
|
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
Published
|
Apr 29, 2005 |
Detailed Description
|
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS50
MG150Q2YS50
High Power Switching Applications Motor Control Appl...
|
Datasheet
|
MG150Q2YS50
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS50
MG150Q2YS50
High Power Switching Applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.
3µs (Max)
@Inductive load l Low saturation voltage
: VCE (sat) = 3.
6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC EITA TOSHIBA Weight: 255g
Characteristic
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal...
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