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MG150Q2YS40

Part Number	MG150Q2YS40
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Appl...
Datasheet	MG150Q2YS40 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
5µs (max) trr = 0.
5µs (max) l Low saturation voltage : VCE (sat) = 4.
0V (max) l Enhancement-mode l Includes a complate half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.
) ― ― 2-109C1A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation volta...

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