Part Number
|
MG200Q2YS50 |
Manufacturer
|
Toshiba |
Description
|
Silicon N Channel IGBT GTR Module |
Published
|
Apr 29, 2005 |
Detailed Description
|
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q2YS50
MG200Q2YS50
High Power Switching Applications Motor Control Appl...
|
Datasheet
|
MG200Q2YS50
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q2YS50
MG200Q2YS50
High Power Switching Applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.
3µs (Max.
)
@Inductive Load l Low saturation voltage
: VCE (sat) = 3.
6V (Max.
) l Enhancement-mode l Includes a complate half bridge in one ackage.
l The electrodes are isolated from case.
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 430g
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Termina...
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