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MG200Q2YS65H

Part Number	MG200Q2YS65H
Manufacturer	Toshiba Semiconductor
Description	IGBT Module Silicon N Channel IGBT
Published	Oct 4, 2007
Detailed Description	www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switc...
Datasheet	MG200Q2YS65H PDF File

Overview

www.
DataSheet4U.
com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.
) ― ― 2-109C4A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 200 400 200 400 1310 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Stor...

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