MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic for microstrip circuits.
package assures minimum parasitic losses, and has a configuration suitable
OUTLINE DRAWING
4MIN.
1
Unit:millimeters
4MIN.
0.
5±0.
15
FEATURES
• High output power at 1dB gain compression P1dB=21.
8dBm(TYP.
) • High linear power gain GLP=8dB(TYP.
) @f=8GHz
0.
5±0.
15
@f=8GHz
2
2
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.
5±0.
2
3
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=6V • ID=100mA...