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MGF1601B

Part Number MGF1601B
Manufacturer Mitsubishi
Description MICROWAVE POWER GaAs FET
Published Apr 29, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET wi...
Datasheet MGF1601B




Overview
MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic for microstrip circuits.
package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN.
1 Unit:millimeters 4MIN.
0.
5±0.
15 FEATURES • High output power at 1dB gain compression P1dB=21.
8dBm(TYP.
) • High linear power gain GLP=8dB(TYP.
) @f=8GHz 0.
5±0.
15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators.
2.
5±0.
2 3 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA...






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