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MGF1601 Datasheet PDF


Part Number MGF1601
Manufacturer Mitsubishi Electric
Title MICROWAVE POWER GaAs FET
Description www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ...
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Datasheet MGF1601 PDF File








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MGF1451A : The MGF1451A is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers QUALITY GRADE IG Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.com (Ta=25°C ) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -8 -8 120 300 175 -55 to +175 (Ta=25°C ) Unit V V mA mW °C °C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always t.

MGF1601B : The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) • High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA • Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATING.

MGF1601B-01 : The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  GG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse.

MGF1801B : The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.) • High linear power gain GLP=9dB(TYP.) • High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE • IG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA • Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN .

MGF1801BT : The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape. FEATURES  High linear power gain Glp=9.0dB @f=8GHz  High P1dB P1dB=23dBm(TYP.) @f=8GHz  High reliability and stability APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  IG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Ga.




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