High-power GaAs FET (small signal gain stage)
MGF2415A
L to Ku BAND / 0.
55W non - matched
DESCRIPTION
The MGF2415A, GaAs FET with an N-channel
schottky gate, is designed for L to Ku band amplifiers.
FEATURES
• High output power P1dB=27.
5dBm(T.
Y.
P) @f=14.
5GHz
• High linear gain GLP=7.
5dB(TYP.
) @f=14.
5GHz
• High power added efficiency P.
A.
E=29%(TYP.
) @f=14.
5GHz,P1dB
• Hermetically sealed metal package
APPLICATION
• For L to Ku band power amplifiers
QUALITY
• IG
OUTLINE DRAWING
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=150mA • Rg=1KΩ
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to Source Voltage
VGSO Gate to source voltage
IDSS Saturated drain current
IGR Reverse gate cur...