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MGF2415A

Mitsubishi
Part Number MGF2415A
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF2415A L to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A,...
Datasheet PDF File MGF2415A PDF File

MGF2415A
MGF2415A

Overview
< High-power GaAs FET (small signal gain stage) > MGF2415A L to Ku BAND / 0.
55W non - matched DESCRIPTION The MGF2415A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers.
FEATURES • High output power P1dB=27.
5dBm(T.
Y.
P) @f=14.
5GHz • High linear gain GLP=7.
5dB(TYP.
) @f=14.
5GHz • High power added efficiency P.
A.
E=29%(TYP.
) @f=14.
5GHz,P1dB • Hermetically sealed metal package APPLICATION • For L to Ku band power amplifiers QUALITY • IG OUTLINE DRAWING RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=150mA • Rg=1KΩ Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage IDSS Saturated drain current IGR Reverse gate cur...


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